Products
· CVD SiC Coating : Graphite & RS(Reaction Sintered)-SiC
Products for LED chip production in MOCVD reactors:
During the extensive coating process in the MOCVD reactor, the properties of the susceptor material have a key influence on coating quality and therefore on the chip reject rate.
Our CVD SiC coated susceptors help ensure efficient manufacture of high-quality LED wafers with low wavelength deviation. Many important factors contribute to this, such as the very high purity and uniform thermal conductivity of the CVD SiC coated graphite or CVD coated RS-SiC. We use specially high purity graphite and RS-SiC for our susceptor plates. High-precision machining and homogeneous coating ensure that the wafer carrier pockets have a uniform profile and the susceptors have high flatness.
CVD SiC Coated Surface
Substrate : Graphite
Substrate : RS-SIC
CVD SiC Coated Thickness Profile
Substrate : Graphite
Substrate : RS-SIC
Physical Properties(Typical)
SiC coating film | |
---|---|
Structure | beta-SiC |
Bulk Density | 3.2 g/cc |
Bending Strength | 500MPa |
Thermal conductivity | 200W/mºC |
Emissivity (650 ºC) | 76% |
Coefficient of Thermal Expansion (25-1200 ºC) | 4.4 10-6(m/ºC) |
Features of RS-SiC
RS-SiC | |
---|---|
Vickers Hardness(Hv) | 2730 |
Bulk Density | 3.05 g/cc |
Flexural Strength | 550 Mpa |
Thermal conductivity | 175W/mºC |
Allowable temperature | 1600 ºC |
Coefficient of Thermal Expansion (25-1200) | 4.6 x 10-6(m/ºC) |